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CMS08(TE12L,Q,M) Toshiba Semiconductor and Storage
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Description: DIODE SCHOTTKY 30V 1A M-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 30 V
auf Bestellung 2485 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
21+ | 0.84 EUR |
28+ | 0.64 EUR |
100+ | 0.39 EUR |
500+ | 0.36 EUR |
1000+ | 0.24 EUR |
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Technische Details CMS08(TE12L,Q,M) Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A M-FLAT, Packaging: Tape & Reel (TR), Package / Case: SOD-128, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 70pF @ 10V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: M-FLAT (2.4x3.8), Operating Temperature - Junction: -40°C ~ 125°C, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 370 mV @ 3 A, Current - Reverse Leakage @ Vr: 1.5 mA @ 30 V.
Weitere Produktangebote CMS08(TE12L,Q,M) nach Preis ab 0.2 EUR bis 0.85 EUR
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CMS08(TE12L,Q,M) | Hersteller : Toshiba |
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auf Bestellung 1246 Stücke: Lieferzeit 10-14 Tag (e) |
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CMS08(TE12L,Q,M) | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 70pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 370 mV @ 3 A Current - Reverse Leakage @ Vr: 1.5 mA @ 30 V |
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