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CMLDM8120G TR PBFREE Central Semiconductor
auf Bestellung 573 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 0.79 EUR |
10+ | 0.68 EUR |
100+ | 0.51 EUR |
500+ | 0.4 EUR |
1000+ | 0.31 EUR |
3000+ | 0.28 EUR |
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Technische Details CMLDM8120G TR PBFREE Central Semiconductor
Description: MOSFET P-CH 20V 860MA SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 860mA (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-563, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): 8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 3.56 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 16 V.
Weitere Produktangebote CMLDM8120G TR PBFREE nach Preis ab 0.31 EUR bis 0.79 EUR
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CMLDM8120G TR PBFREE | Hersteller : Central Semiconductor Corp |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 860mA (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): 8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.56 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 16 V |
auf Bestellung 1439 Stücke: Lieferzeit 10-14 Tag (e) |
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CMLDM8120G TR PBFREE | Hersteller : Central Semiconductor Corp |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 860mA (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): 8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.56 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 16 V |
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