CDBDSC51200-G Comchip Technology
Hersteller: Comchip TechnologyDescription: DIODE SIL CARBIDE 1.2KV 18A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 475pF @ 0V, 1MHz
Current - Average Rectified (Io): 18A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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Technische Details CDBDSC51200-G Comchip Technology
Description: DIODE SIL CARBIDE 1.2KV 18A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 475pF @ 0V, 1MHz, Current - Average Rectified (Io): 18A, Supplier Device Package: DPAK, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.
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