CAB530M12BM3 MACOM
Hersteller: MACOMDiscrete Semiconductor Modules SiC, Module, 530A, 1200V, 62mm, BM3, Half-Bridge, Industrial, Gen 3
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 1548.17 EUR |
| 10+ | 1544.8 EUR |
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Technische Details CAB530M12BM3 MACOM
Description: 1200V, 530A H-BRIDGE SIC MODULE, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel, Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 530A, Input Capacitance (Ciss) (Max) @ Vds: 39600pF @ 800V, Rds On (Max) @ Id, Vgs: 3.55mOhm @ 530A, 15V, Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 4V, Vgs(th) (Max) @ Id: 3.6V @ 140mA, Supplier Device Package: Module, Part Status: Active.
Weitere Produktangebote CAB530M12BM3 nach Preis ab 1544.8 EUR bis 1664.8 EUR
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CAB530M12BM3 | Hersteller : Wolfspeed |
Discrete Semiconductor Modules SiC, Module, 530A, 1200V, 62mm, BM3, Half-Bridge, Industrial, Gen 3 |
auf Bestellung 32 Stücke: Lieferzeit 10-14 Tag (e) |
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CAB530M12BM3 | Hersteller : Wolfspeed, Inc. |
Description: 1200V, 530A H-BRIDGE SIC MODULE Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 530A Input Capacitance (Ciss) (Max) @ Vds: 39600pF @ 800V Rds On (Max) @ Id, Vgs: 3.55mOhm @ 530A, 15V Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 4V Vgs(th) (Max) @ Id: 3.6V @ 140mA Supplier Device Package: Module Part Status: Active |
auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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