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BYV16-TAP Vishay General Semiconductor - Diodes Division
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Description: DIODE AVALANCHE 1KV 1.5A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.36 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BYV16-TAP Vishay General Semiconductor - Diodes Division
Category: THT universal diodes, Description: Diode: rectifying; THT; 1kV; 1.5A; Ammo Pack; Ifsm: 40A; SOD57; 300ns, Max. off-state voltage: 1kV, Load current: 1.5A, Max. forward impulse current: 40A, Case: SOD57, Max. forward voltage: 1.5V, Kind of package: Ammo Pack, Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated, Leakage current: 0.15mA, Type of diode: rectifying, Mounting: THT, Max. load current: 9A, Semiconductor structure: single diode, Reverse recovery time: 300ns, Anzahl je Verpackung: 25000 Stücke.
Weitere Produktangebote BYV16-TAP nach Preis ab 0.36 EUR bis 1.11 EUR
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BYV16-TAP | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Avalanche Current - Average Rectified (Io): 1.5A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 8876 Stücke: Lieferzeit 10-14 Tag (e) |
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BYV16-TAP | Hersteller : Vishay Semiconductors |
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auf Bestellung 24091 Stücke: Lieferzeit 10-14 Tag (e) |
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BYV16-TAP | Hersteller : VISHAY |
![]() Description: Diode: rectifying; THT; 1kV; 1.5A; Ammo Pack; Ifsm: 40A; SOD57; 300ns Max. off-state voltage: 1kV Load current: 1.5A Max. forward impulse current: 40A Case: SOD57 Max. forward voltage: 1.5V Kind of package: Ammo Pack Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated Leakage current: 0.15mA Type of diode: rectifying Mounting: THT Max. load current: 9A Semiconductor structure: single diode Reverse recovery time: 300ns Anzahl je Verpackung: 25000 Stücke |
Produkt ist nicht verfügbar |
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BYV16-TAP | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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BYV16-TAP | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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BYV16-TAP | Hersteller : VISHAY |
![]() Description: Diode: rectifying; THT; 1kV; 1.5A; Ammo Pack; Ifsm: 40A; SOD57; 300ns Max. off-state voltage: 1kV Load current: 1.5A Max. forward impulse current: 40A Case: SOD57 Max. forward voltage: 1.5V Kind of package: Ammo Pack Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated Leakage current: 0.15mA Type of diode: rectifying Mounting: THT Max. load current: 9A Semiconductor structure: single diode Reverse recovery time: 300ns |
Produkt ist nicht verfügbar |