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BYP60K2

BYP60K2 Diotec Semiconductor

byp60a05.pdf Hersteller: Diotec Semiconductor
Description: DIODE GEN PURP 200V 60A DO208
Packaging: Tape & Box (TB)
Package / Case: DO-208AA
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-208
Operating Temperature - Junction: -50°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
300+1.55 EUR
Mindestbestellmenge: 300
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Technische Details BYP60K2 Diotec Semiconductor

Description: DIODE GEN PURP 200V 60A DO208, Packaging: Tape & Box (TB), Package / Case: DO-208AA, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.5 µs, Technology: Standard, Current - Average Rectified (Io): 60A, Supplier Device Package: DO-208, Operating Temperature - Junction: -50°C ~ 200°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A, Current - Reverse Leakage @ Vr: 100 µA @ 200 V.

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BYP60K2 BYP60K2 Hersteller : Diotec Semiconductor byp60a05.pdf Description: DIODE GEN PURP 200V 60A DO208
Packaging: Cut Tape (CT)
Package / Case: DO-208AA
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-208
Operating Temperature - Junction: -50°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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