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BYD37M,115 NXP USA Inc.
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Description: DIODE AVALANCHE 1KV 600MA MELF
Packaging: Tape & Reel (TR)
Package / Case: SOD-87
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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Technische Details BYD37M,115 NXP USA Inc.
Description: DIODE AVALANCHE 1KV 600MA MELF, Packaging: Tape & Reel (TR), Package / Case: SOD-87, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 300 ns, Technology: Avalanche, Capacitance @ Vr, F: 20pF @ 0V, 1MHz, Current - Average Rectified (Io): 600mA, Supplier Device Package: MELF, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A, Current - Reverse Leakage @ Vr: 1 µA @ 1000 V.
Weitere Produktangebote BYD37M,115
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BYD37M,115 | Hersteller : NXP Semiconductors |
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