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BY229X-800,127 NXP USA Inc.
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Description: DIODE GEN PURP 600V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 135 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
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Technische Details BY229X-800,127 NXP USA Inc.
Description: DIODE GEN PURP 600V 8A TO220FP, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 135 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-220FP, Operating Temperature - Junction: 150°C (Max), Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A, Current - Reverse Leakage @ Vr: 400 µA @ 600 V.
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BY229X-800,127 | Hersteller : NXP Semiconductors |
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