BXS045N10C BRIDGELUX
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 117A; Idm: 600A; 167W; PDFN56
Case: PDFN56
Mounting: SMD
Power dissipation: 167W
Drain-source voltage: 100V
Drain current: 117A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 75nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 600A
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 117A; Idm: 600A; 167W; PDFN56
Case: PDFN56
Mounting: SMD
Power dissipation: 167W
Drain-source voltage: 100V
Drain current: 117A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 75nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 600A
Anzahl je Verpackung: 5000 Stücke
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Technische Details BXS045N10C BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 117A; Idm: 600A; 167W; PDFN56, Case: PDFN56, Mounting: SMD, Power dissipation: 167W, Drain-source voltage: 100V, Drain current: 117A, On-state resistance: 7.5mΩ, Type of transistor: N-MOSFET, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 75nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 600A, Anzahl je Verpackung: 5000 Stücke.
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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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BXS045N10C | Hersteller : BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 117A; Idm: 600A; 167W; PDFN56 Case: PDFN56 Mounting: SMD Power dissipation: 167W Drain-source voltage: 100V Drain current: 117A On-state resistance: 7.5mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel; tape Gate charge: 75nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 600A |
Produkt ist nicht verfügbar |