BVSS84LT1G onsemi
Hersteller: onsemi
Description: MOSFET P-CH 50V 130MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 5 V
Qualification: AEC-Q101
Description: MOSFET P-CH 50V 130MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 5 V
Qualification: AEC-Q101
auf Bestellung 117000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.14 EUR |
6000+ | 0.13 EUR |
9000+ | 0.12 EUR |
75000+ | 0.099 EUR |
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Technische Details BVSS84LT1G onsemi
Description: MOSFET P-CH 50V 130MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 130mA (Ta), Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V, Power Dissipation (Max): 225mW (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 5 V, Qualification: AEC-Q101.
Weitere Produktangebote BVSS84LT1G nach Preis ab 0.11 EUR bis 0.62 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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BVSS84LT1G | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.225W; SOT23 Case: SOT23 Mounting: SMD On-state resistance: 10Ω Kind of package: reel; tape Gate-source voltage: ±20V Power dissipation: 0.225W Polarisation: unipolar Drain current: -130mA Kind of channel: enhanced Drain-source voltage: -50V Type of transistor: P-MOSFET Anzahl je Verpackung: 5 Stücke |
auf Bestellung 1175 Stücke: Lieferzeit 7-14 Tag (e) |
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BVSS84LT1G | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.225W; SOT23 Case: SOT23 Mounting: SMD On-state resistance: 10Ω Kind of package: reel; tape Gate-source voltage: ±20V Power dissipation: 0.225W Polarisation: unipolar Drain current: -130mA Kind of channel: enhanced Drain-source voltage: -50V Type of transistor: P-MOSFET |
auf Bestellung 1175 Stücke: Lieferzeit 14-21 Tag (e) |
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BVSS84LT1G | Hersteller : onsemi | MOSFET PFET 50V 130MA 10.0 |
auf Bestellung 18195 Stücke: Lieferzeit 10-14 Tag (e) |
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BVSS84LT1G | Hersteller : onsemi |
Description: MOSFET P-CH 50V 130MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 5 V Qualification: AEC-Q101 |
auf Bestellung 117421 Stücke: Lieferzeit 10-14 Tag (e) |
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BVSS84LT1G | Hersteller : ON Semiconductor | Trans MOSFET P-CH 50V 0.13A Automotive 3-Pin SOT-23 T/R |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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BVSS84LT1G | Hersteller : On Semiconductor | MOSFET P-Channel 50V 130mA (Ta) 225mW (Ta) Surface Mount SOT-23-3 |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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BVSS84LT1G | Hersteller : ONSEMI |
Description: ONSEMI - BVSS84LT1G - PFET SOT23 50V 130MA 10.0 tariffCode: 85412100 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: true rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (15-Jan-2018) |
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