Technische Details BUZ31 INFINEON
Description: MOSFET N-CH 200V 14.5A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 5V, Power Dissipation (Max): 95W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: PG-TO220-3, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V.
Weitere Produktangebote BUZ31
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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BUZ31 | Hersteller : INF | TO-220 |
auf Bestellung 35000 Stücke: Lieferzeit 21-28 Tag (e) |
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BUZ31 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 200V 14.5A 3-Pin(3+Tab) TO-220 |
Produkt ist nicht verfügbar |
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BUZ31 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 200V 14.5A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 5V Power Dissipation (Max): 95W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V |
Produkt ist nicht verfügbar |
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BUZ31 | Hersteller : Infineon Technologies | GaN FETs N-Ch 200V 14.5A TO220-3 |
Produkt ist nicht verfügbar |