Technische Details BUZ30AH Infineon technologies
Description: MOSFET N-CH 200V 21A TO220-3, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: PG-TO220-3, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V.
Weitere Produktangebote BUZ30AH
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BUZ30AH Produktcode: 140368 |
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BUZ30AH | Hersteller : Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PG-TO220-3 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V |
Produkt ist nicht verfügbar |
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BUZ30A H | Hersteller : Infineon Technologies |
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