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BUZ30AH3045AATMA1

BUZ30AH3045AATMA1 Infineon Technologies

Buz30a+H3045A+Rev+2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a304325305e6d012596cd45e4290f Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 21A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
403+1.2 EUR
Mindestbestellmenge: 403
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Technische Details BUZ30AH3045AATMA1 Infineon Technologies

Description: MOSFET N-CH 200V 21A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: PG-TO263-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V.

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BUZ30AH3045AATMA1 BUZ30AH3045AATMA1 Hersteller : INFINEON TECHNOLOGIES BUZ30AH3045A-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; 125W; PG-TO263-3
Mounting: SMD
Kind of channel: enhanced
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO263-3
On-state resistance: 0.13Ω
Power dissipation: 125W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 21A
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
21+3.4 EUR
Mindestbestellmenge: 21
BUZ30AH3045AATMA1 BUZ30AH3045AATMA1 Hersteller : Infineon Technologies Infineon-BUZ30AH3045A-DS-v02_02-en-1731331.pdf MOSFET N-Ch 200V 21A D2PAK-2
auf Bestellung 970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.14 EUR
10+ 3.73 EUR
100+ 2.99 EUR
500+ 2.45 EUR
1000+ 2.04 EUR
2000+ 1.92 EUR
BUZ30AH3045AATMA1 Hersteller : ROCHESTER ELECTRONICS Buz30a+H3045A+Rev+2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a304325305e6d012596cd45e4290f Description: ROCHESTER ELECTRONICS - BUZ30AH3045AATMA1 - BUZ30 - 12V-300V N-CHANNEL POWER MOSFET
euEccn: TBC
hazardous: false
productTraceability: Yes-Date/Lot Code
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 1800 Stücke:
Lieferzeit 14-21 Tag (e)
BUZ30AH3045AATMA1 BUZ30AH3045AATMA1 Hersteller : Infineon Technologies buz30ah3045arev2.1.pdffolderiddb3a304325305e6d012596c6ca7b290afileiddb3a304325305e6d012596cd.pdf Trans MOSFET N-CH 200V 21A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
BUZ30AH3045AATMA1 BUZ30AH3045AATMA1 Hersteller : Infineon Technologies Buz30a+H3045A+Rev+2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a304325305e6d012596cd45e4290f Description: MOSFET N-CH 200V 21A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Produkt ist nicht verfügbar
BUZ30AH3045AATMA1 BUZ30AH3045AATMA1 Hersteller : Infineon Technologies Buz30a+H3045A+Rev+2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a304325305e6d012596cd45e4290f Description: MOSFET N-CH 200V 21A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Produkt ist nicht verfügbar