Technische Details BUP213 INF
Description: IGBT 1200V 32A 200W TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A, Supplier Device Package: TO-220AB, Td (on/off) @ 25°C: 70ns/400ns, Test Condition: 600V, 15A, 82Ohm, 15V, Part Status: Obsolete, Current - Collector (Ic) (Max): 32 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 64 A, Power - Max: 200 W.
Weitere Produktangebote BUP213
Foto | Bezeichnung | Hersteller | Beschreibung |
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BUP213 Produktcode: 3798 |
Transistoren > Transistoren IGBT, Leistungsmodule |
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BUP213 | Hersteller : Infineon Technologies | Trans IGBT Chip N-CH 1200V 32A 200000mW 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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BUP213 | Hersteller : Infineon Technologies |
Description: IGBT 1200V 32A 200W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A Supplier Device Package: TO-220AB Td (on/off) @ 25°C: 70ns/400ns Test Condition: 600V, 15A, 82Ohm, 15V Part Status: Obsolete Current - Collector (Ic) (Max): 32 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 64 A Power - Max: 200 W |
Produkt ist nicht verfügbar |