BUK9M5R2-30EX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 30V 70A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 25A, 10V
Power Dissipation (Max): 79W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2467 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1500+ | 0.73 EUR |
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Technische Details BUK9M5R2-30EX Nexperia USA Inc.
Description: MOSFET N-CH 30V 70A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Ta), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 25A, 10V, Power Dissipation (Max): 79W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2467 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK9M5R2-30EX nach Preis ab 0.6 EUR bis 5.89 EUR
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BUK9M5R2-30EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 70A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Ta) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 25A, 10V Power Dissipation (Max): 79W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2467 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2984 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9M5R2-30EX | Hersteller : Nexperia |
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| BUK9M5R2-30EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 63A; Idm: 358A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 63A Pulsed drain current: 358A Power dissipation: 79W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 9.8mΩ Mounting: SMD Gate charge: 22.5nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
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| BUK9M5R2-30EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 63A; Idm: 358A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 63A Pulsed drain current: 358A Power dissipation: 79W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 9.8mΩ Mounting: SMD Gate charge: 22.5nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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