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BUK9M23-80EX Nexperia USA Inc.
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Description: MOSFET N-CH 80V 37A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2808 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1500+ | 0.61 EUR |
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Technische Details BUK9M23-80EX Nexperia USA Inc.
Description: MOSFET N-CH 80V 37A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V, Power Dissipation (Max): 79W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK33, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2808 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BUK9M23-80EX nach Preis ab 0.58 EUR bis 5.89 EUR
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BUK9M23-80EX | Hersteller : Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2808 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2890 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9M23-80EX | Hersteller : Nexperia |
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auf Bestellung 7249 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9M23-80EX | Hersteller : NXP |
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auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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BUK9M23-80EX | Hersteller : Nexperia |
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BUK9M23-80EX | Hersteller : NEXPERIA |
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BUK9M23-80EX | Hersteller : Nexperia |
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BUK9M23-80EX | Hersteller : NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 26A; Idm: 148A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 26A Pulsed drain current: 148A Power dissipation: 79W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 58mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
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BUK9M23-80EX | Hersteller : NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 26A; Idm: 148A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 26A Pulsed drain current: 148A Power dissipation: 79W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 58mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |