BUK9M19-60EX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 60V 38A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1814 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1500+ | 0.52 EUR |
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Technische Details BUK9M19-60EX Nexperia USA Inc.
Description: MOSFET N-CH 60V 38A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V, Power Dissipation (Max): 62W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK33, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1814 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BUK9M19-60EX nach Preis ab 0.48 EUR bis 5.89 EUR
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BUK9M19-60EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 38A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1814 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 1567 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9M19-60EX | Hersteller : Nexperia |
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BUK9M19-60EX | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 38A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
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| BUK9M19-60EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 26.8A; Idm: 152A; 62W Mounting: SMD Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Power dissipation: 62W Gate charge: 13.8nC Kind of channel: enhanced Pulsed drain current: 152A Case: LFPAK33; SOT1210 Drain-source voltage: 60V Drain current: 26.8A On-state resistance: 43mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M19-60EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 26.8A; Idm: 152A; 62W Mounting: SMD Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Power dissipation: 62W Gate charge: 13.8nC Kind of channel: enhanced Pulsed drain current: 152A Case: LFPAK33; SOT1210 Drain-source voltage: 60V Drain current: 26.8A On-state resistance: 43mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |