auf Bestellung 6847 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.69 EUR |
| 10+ | 2.25 EUR |
| 100+ | 1.8 EUR |
| 250+ | 1.67 EUR |
| 500+ | 1.51 EUR |
| 1000+ | 1.27 EUR |
| 1500+ | 1.18 EUR |
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Technische Details BUK9K6R2-40E,115 Nexperia
Description: MOSFET 2N-CH 40V 40A LFPAK56D, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 68W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 40A, Input Capacitance (Ciss) (Max) @ Vds: 3281pF @ 25V, Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V, Gate Charge (Qg) (Max) @ Vgs: 35.4nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56D, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK9K6R2-40E,115 nach Preis ab 1.64 EUR bis 2.92 EUR
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BUK9K6R2-40E,115 | Hersteller : Nexperia USA Inc. |
 Description: MOSFET 2N-CH 40V 40A LFPAK56DPackaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 68W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 3281pF @ 25V Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V Gate Charge (Qg) (Max) @ Vgs: 35.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 2547 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9K6R2-40E,115 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 40V 40A Automotive 8-Pin LFPAK-D T/R |
Produkt ist nicht verfügbar |
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BUK9K6R2-40E,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 40V 40A LFPAK56D Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 68W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 3281pF @ 25V Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V Gate Charge (Qg) (Max) @ Vgs: 35.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| BUK9K6R2-40E,115 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |