BUK9616-75B,118 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 67A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4034 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 75V 67A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4034 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
800+ | 1.44 EUR |
1600+ | 1.22 EUR |
2400+ | 1.16 EUR |
5600+ | 1.12 EUR |
Produktrezensionen
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Technische Details BUK9616-75B,118 Nexperia USA Inc.
Description: MOSFET N-CH 75V 67A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 67A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V, Power Dissipation (Max): 157W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: D2PAK, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 4034 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BUK9616-75B,118 nach Preis ab 1.13 EUR bis 2.57 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
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BUK9616-75B,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 47A; Idm: 270A; 157W Drain current: 47A Application: automotive industry Drain-source voltage: 75V Power dissipation: 157W Polarisation: unipolar Kind of package: reel; tape Case: D2PAK; SOT404 Features of semiconductor devices: logic level Gate charge: 35nC Kind of channel: enhanced Gate-source voltage: ±15V Pulsed drain current: 270A Mounting: SMD On-state resistance: 34mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 487 Stücke: Lieferzeit 7-14 Tag (e) |
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BUK9616-75B,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 47A; Idm: 270A; 157W Drain current: 47A Application: automotive industry Drain-source voltage: 75V Power dissipation: 157W Polarisation: unipolar Kind of package: reel; tape Case: D2PAK; SOT404 Features of semiconductor devices: logic level Gate charge: 35nC Kind of channel: enhanced Gate-source voltage: ±15V Pulsed drain current: 270A Mounting: SMD On-state resistance: 34mΩ Type of transistor: N-MOSFET |
auf Bestellung 487 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9616-75B,118 | Hersteller : Nexperia | MOSFETs BUK9616-75B/SOT404/D2PAK |
auf Bestellung 1164 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9616-75B,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 75V 67A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V Power Dissipation (Max): 157W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4034 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 6355 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9616-75B,118 | Hersteller : NEXPERIA | Trans MOSFET N-CH 75V 67A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |