BUK9608-55B,118 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 203W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 203W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 31200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
800+ | 1.95 EUR |
1600+ | 1.65 EUR |
2400+ | 1.57 EUR |
5600+ | 1.51 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BUK9608-55B,118 Nexperia USA Inc.
Description: NEXPERIA - BUK9608-55B,118 - Leistungs-MOSFET, n-Kanal, 55 V, 75 A, 0.0062 ohm, TO-263 (D2PAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 55V, rohsCompliant: YES, Dauer-Drainstrom Id: 75A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1.5V, euEccn: NLR, Verlustleistung: 203W, Bauform - Transistor: TO-263 (D2PAK), Anzahl der Pins: 3Pin(s), Produktpalette: TrenchMOS, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.0062ohm, SVHC: No SVHC (14-Jun-2023).
Weitere Produktangebote BUK9608-55B,118 nach Preis ab 1.54 EUR bis 3.48 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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BUK9608-55B,118 | Hersteller : Nexperia | MOSFETs BUK9608-55B/SOT404/D2PAK |
auf Bestellung 2631 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9608-55B,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 55V 75A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V Power Dissipation (Max): 203W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 33152 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9608-55B,118 | Hersteller : NEXPERIA |
Description: NEXPERIA - BUK9608-55B,118 - Leistungs-MOSFET, n-Kanal, 55 V, 75 A, 0.0062 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 75A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 203W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: TrenchMOS productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0062ohm SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 7679 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9608-55B,118 | Hersteller : NEXPERIA |
Description: NEXPERIA - BUK9608-55B,118 - Leistungs-MOSFET, n-Kanal, 55 V, 75 A, 0.0062 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 75A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 203W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: TrenchMOS productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0062ohm SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 7679 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9608-55B,118 | Hersteller : NEXPERIA | Trans MOSFET N-CH 55V 110A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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BUK9608-55B,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 75A; Idm: 439A; 203W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 75A Pulsed drain current: 439A Power dissipation: 203W Case: D2PAK; SOT404 Gate-source voltage: ±15V On-state resistance: 16.8mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BUK9608-55B,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 75A; Idm: 439A; 203W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 75A Pulsed drain current: 439A Power dissipation: 203W Case: D2PAK; SOT404 Gate-source voltage: ±15V On-state resistance: 16.8mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level Application: automotive industry |
Produkt ist nicht verfügbar |