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BUK7M21-40EX Nexperia USA Inc.
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Description: MOSFET N-CH 40V 33A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 593 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1494 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
16+ | 1.14 EUR |
18+ | 0.98 EUR |
100+ | 0.68 EUR |
500+ | 0.57 EUR |
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Technische Details BUK7M21-40EX Nexperia USA Inc.
Description: MOSFET N-CH 40V 33A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V, Power Dissipation (Max): 44W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK33, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 593 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BUK7M21-40EX
Foto | Bezeichnung | Hersteller | Beschreibung |
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BUK7M21-40EX | Hersteller : Nexperia |
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auf Bestellung 34 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7M21-40EX | Hersteller : NEXPERIA |
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Produkt ist nicht verfügbar |
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BUK7M21-40EX | Hersteller : NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 23.1A; Idm: 131A; 44W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 23.1A Pulsed drain current: 131A Power dissipation: 44W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Gate charge: 10.7nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BUK7M21-40EX | Hersteller : Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V Power Dissipation (Max): 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 593 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|
BUK7M21-40EX | Hersteller : NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 23.1A; Idm: 131A; 44W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 23.1A Pulsed drain current: 131A Power dissipation: 44W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Gate charge: 10.7nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |