![BUK7K5R6-30E,115 BUK7K5R6-30E,115](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/2265/MFG_LFPAK56D.jpg)
BUK7K5R6-30E,115 Nexperia USA Inc.
![BUK7K5R6-30E.pdf](/images/adobe-acrobat.png)
Description: MOSFET 2N-CH 30V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 1969pF @ 25V
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1500+ | 1.17 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BUK7K5R6-30E,115 Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 40A LFPAK56D, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 64W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 40A, Input Capacitance (Ciss) (Max) @ Vds: 1969pF @ 25V, Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V, Gate Charge (Qg) (Max) @ Vgs: 29.7nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56D, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK7K5R6-30E,115 nach Preis ab 0.98 EUR bis 2.46 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
BUK7K5R6-30E,115 | Hersteller : Nexperia |
![]() |
auf Bestellung 1442 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
BUK7K5R6-30E,115 | Hersteller : Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 64W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 1969pF @ 25V Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V Gate Charge (Qg) (Max) @ Vgs: 29.7nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 2931 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
BUK7K5R6-30E,115 | Hersteller : NEXPERIA |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||||
BUK7K5R6-30E,115 | Hersteller : NEXPERIA |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 314A; 64W Mounting: SMD Power dissipation: 64W Application: automotive industry Drain-source voltage: 30V Drain current: 40A On-state resistance: 10.3mΩ Type of transistor: N-MOSFET x2 Polarisation: unipolar Kind of package: reel; tape Case: LFPAK33; SOT1210 Gate charge: 29.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 314A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
BUK7K5R6-30E,115 | Hersteller : NEXPERIA |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 314A; 64W Mounting: SMD Power dissipation: 64W Application: automotive industry Drain-source voltage: 30V Drain current: 40A On-state resistance: 10.3mΩ Type of transistor: N-MOSFET x2 Polarisation: unipolar Kind of package: reel; tape Case: LFPAK33; SOT1210 Gate charge: 29.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 314A |
Produkt ist nicht verfügbar |