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BUK7K5R6-30E,115

BUK7K5R6-30E,115 Nexperia USA Inc.


BUK7K5R6-30E.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 1969pF @ 25V
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+1.17 EUR
Mindestbestellmenge: 1500
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Technische Details BUK7K5R6-30E,115 Nexperia USA Inc.

Description: MOSFET 2N-CH 30V 40A LFPAK56D, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 64W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 40A, Input Capacitance (Ciss) (Max) @ Vds: 1969pF @ 25V, Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V, Gate Charge (Qg) (Max) @ Vgs: 29.7nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56D, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.

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BUK7K5R6-30E,115 BUK7K5R6-30E,115 Hersteller : Nexperia BUK7K5R6_30E-2937767.pdf MOSFETs BUK7K5R6-30E/SOT1205/LFPAK56D
auf Bestellung 1442 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.46 EUR
10+ 2.01 EUR
100+ 1.56 EUR
500+ 1.33 EUR
1000+ 1.08 EUR
1500+ 1.02 EUR
3000+ 0.98 EUR
Mindestbestellmenge: 2
BUK7K5R6-30E,115 BUK7K5R6-30E,115 Hersteller : Nexperia USA Inc. BUK7K5R6-30E.pdf Description: MOSFET 2N-CH 30V 40A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 1969pF @ 25V
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2931 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.46 EUR
10+ 2.04 EUR
100+ 1.62 EUR
500+ 1.37 EUR
Mindestbestellmenge: 8
BUK7K5R6-30E,115 BUK7K5R6-30E,115 Hersteller : NEXPERIA 3012654918136552buk7k5r6-30e.pdf Trans MOSFET N-CH 30V 40A Automotive 8-Pin LFPAK-D T/R
Produkt ist nicht verfügbar
BUK7K5R6-30E,115 Hersteller : NEXPERIA BUK7K5R6-30E.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 314A; 64W
Mounting: SMD
Power dissipation: 64W
Application: automotive industry
Drain-source voltage: 30V
Drain current: 40A
On-state resistance: 10.3mΩ
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Kind of package: reel; tape
Case: LFPAK33; SOT1210
Gate charge: 29.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 314A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK7K5R6-30E,115 Hersteller : NEXPERIA BUK7K5R6-30E.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 314A; 64W
Mounting: SMD
Power dissipation: 64W
Application: automotive industry
Drain-source voltage: 30V
Drain current: 40A
On-state resistance: 10.3mΩ
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Kind of package: reel; tape
Case: LFPAK33; SOT1210
Gate charge: 29.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 314A
Produkt ist nicht verfügbar