BUK7J1R4-40HX Nexperia
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1500+ | 2.49 EUR |
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Technische Details BUK7J1R4-40HX Nexperia
Description: MOSFET N-CH 40V 190A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V, Power Dissipation (Max): 395W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: LFPAK56; Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): +20V, -10V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8155 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK7J1R4-40HX nach Preis ab 1.61 EUR bis 4.88 EUR
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BUK7J1R4-40HX | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 40V 190A LFPAK56Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V Power Dissipation (Max): 395W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK56; Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): +20V, -10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8155 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7J1R4-40HX | Hersteller : Nexperia |
Trans MOSFET N-CH 40V 190A 5-Pin(4+Tab) LFPAK T/R Automotive AEC-Q101 |
auf Bestellung 792 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7J1R4-40HX | Hersteller : Nexperia |
Trans MOSFET N-CH 40V 190A 5-Pin(4+Tab) LFPAK T/R Automotive AEC-Q101 |
auf Bestellung 1425 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7J1R4-40HX | Hersteller : Nexperia |
Trans MOSFET N-CH 40V 190A 5-Pin(4+Tab) LFPAK T/R Automotive AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7J1R4-40HX | Hersteller : Nexperia |
Trans MOSFET N-CH 40V 120A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7J1R4-40HX | Hersteller : Nexperia |
Trans MOSFET N-CH 40V 120A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7J1R4-40HX | Hersteller : Nexperia |
MOSFETs BUK7J1R4-40H/SOT1023/4 LEADS |
auf Bestellung 27778 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7J1R4-40HX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 190A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V Power Dissipation (Max): 395W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK56; Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): +20V, -10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8155 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3871 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7J1R4-40HX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 40V 190A Automotive 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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BUK7J1R4-40HX | Hersteller : Nexperia |
Trans MOSFET N-CH 40V 190A 5-Pin(4+Tab) LFPAK T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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| BUK7J1R4-40HX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 190A; Idm: 600A; 395W Kind of package: reel; tape On-state resistance: 1.4mΩ Drain current: 190A Drain-source voltage: 40V Case: LFPAK56E; PowerSO8; SOT1023 Gate charge: 103nC Mounting: SMD Technology: Trench Kind of channel: enhanced Type of transistor: N-MOSFET Pulsed drain current: 600A Application: automotive industry Power dissipation: 395W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7J1R4-40HX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 190A; Idm: 600A; 395W Kind of package: reel; tape On-state resistance: 1.4mΩ Drain current: 190A Drain-source voltage: 40V Case: LFPAK56E; PowerSO8; SOT1023 Gate charge: 103nC Mounting: SMD Technology: Trench Kind of channel: enhanced Type of transistor: N-MOSFET Pulsed drain current: 600A Application: automotive industry Power dissipation: 395W Polarisation: unipolar |
Produkt ist nicht verfügbar |