BUJD203A,127 NXP USA Inc.
Hersteller: NXP USA Inc.Description: NOW WEEN - BUJD203A - POWER BIPO
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 11 @ 2A, 5V
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 425 V
Power - Max: 80 W
auf Bestellung 1499 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 908+ | 0.54 EUR |
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Technische Details BUJD203A,127 NXP USA Inc.
Description: NOW WEEN - BUJD203A - POWER BIPO, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 11 @ 2A, 5V, Supplier Device Package: TO-220AB, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 425 V, Power - Max: 80 W.
Weitere Produktangebote BUJD203A,127
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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BUJD203A,127 | Hersteller : WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 425V; 4A; 80W; TO220AB Collector-emitter voltage: 425V Current gain: 11...22 Collector current: 4A Type of transistor: NPN Power dissipation: 80W Polarisation: bipolar Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Mounting: THT Case: TO220AB Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUJD203A,127 | Hersteller : WeEn Semiconductors |
Bipolar Transistors - BJT NPN 425 V 4 A |
Produkt ist nicht verfügbar |
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BUJD203A,127 | Hersteller : WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 425V; 4A; 80W; TO220AB Collector-emitter voltage: 425V Current gain: 11...22 Collector current: 4A Type of transistor: NPN Power dissipation: 80W Polarisation: bipolar Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Mounting: THT Case: TO220AB |
Produkt ist nicht verfügbar |