BU2508-M3/51 Vishay General Semiconductor - Diodes Division
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Description: BRIDGE RECT 1P 800V 3.5A BU
Packaging: Tray
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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Technische Details BU2508-M3/51 Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.5A BU, Packaging: Tray, Package / Case: 4-SIP, BU, Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: isoCINK+™ BU, Part Status: Active, Voltage - Peak Reverse (Max): 800 V, Current - Average Rectified (Io): 3.5 A, Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A, Current - Reverse Leakage @ Vr: 5 µA @ 600 V.
Weitere Produktangebote BU2508-M3/51
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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BU2508-M3/51 | Hersteller : Vishay General Semiconductor |
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