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BSZ060NE2LSATMA1

BSZ060NE2LSATMA1 Infineon Technologies

BSZ060NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ea425a4012ec927cb360e1f Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 12A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 12 V
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.43 EUR
Mindestbestellmenge: 5000
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Technische Details BSZ060NE2LSATMA1 Infineon Technologies

Description: MOSFET N-CH 25V 12A/40A TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 26W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TSDSON-8-FL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 12 V.

Weitere Produktangebote BSZ060NE2LSATMA1 nach Preis ab 0.43 EUR bis 0.92 EUR

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BSZ060NE2LSATMA1 BSZ060NE2LSATMA1 Hersteller : Infineon Technologies Infineon_BSZ060NE2LS_DataSheet_v02_04_EN-3360872.pdf MOSFETs N-Ch 25V 40A TDSON-8 OptiMOS
auf Bestellung 68221 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.78 EUR
10+ 0.7 EUR
100+ 0.53 EUR
500+ 0.44 EUR
1000+ 0.43 EUR
Mindestbestellmenge: 4
BSZ060NE2LSATMA1 BSZ060NE2LSATMA1 Hersteller : Infineon Technologies BSZ060NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ea425a4012ec927cb360e1f Description: MOSFET N-CH 25V 12A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 12 V
auf Bestellung 53049 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.92 EUR
23+ 0.79 EUR
100+ 0.55 EUR
500+ 0.46 EUR
1000+ 0.43 EUR
Mindestbestellmenge: 20
BSZ060NE2LSATMA1 BSZ060NE2LSATMA1 Hersteller : Infineon Technologies infineon-bsz060ne2ls-datasheet-v02_04-en.pdf Trans MOSFET N-CH 25V 12A 8-Pin TSDSON EP T/R
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)