BSS84AKW-B115 NXP
Hersteller: NXPDescription: NXP - BSS84AKW-B115 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
euEccn: NLR
hazardous: false
rohsCompliant: YES
productTraceability: No
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 193514 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details BSS84AKW-B115 NXP
Description: MOSFET P-CH, Packaging: Bulk, Technology: MOSFET (Metal Oxide), Part Status: Active, Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Supplier Device Package: SC-70, Operating Temperature: -55°C ~ 150°C (TJ), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 150mA (Ta), Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V, Power Dissipation (Max): 260mW (Ta), 830mW (Tc), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BSS84AKW-B115
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BSS84AKW-B115 | Hersteller : NXP USA Inc. |
Description: MOSFET P-CH Packaging: Bulk Technology: MOSFET (Metal Oxide) Part Status: Active Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Supplier Device Package: SC-70 Operating Temperature: -55°C ~ 150°C (TJ) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V Power Dissipation (Max): 260mW (Ta), 830mW (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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