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BSS84 RFG Taiwan Semiconductor
auf Bestellung 6140 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
8+ | 0.39 EUR |
11+ | 0.27 EUR |
100+ | 0.17 EUR |
1000+ | 0.077 EUR |
3000+ | 0.065 EUR |
9000+ | 0.049 EUR |
99000+ | 0.044 EUR |
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Technische Details BSS84 RFG Taiwan Semiconductor
Description: -60, -0.15, SINGLE P-CHANNEL, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 150mA (Ta), Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 10V, Power Dissipation (Max): 357mW (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 30 V.
Weitere Produktangebote BSS84 RFG nach Preis ab 0.075 EUR bis 0.39 EUR
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BSS84 RFG | Hersteller : Taiwan Semiconductor Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 10V Power Dissipation (Max): 357mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 30 V |
auf Bestellung 5754 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS84 RFG | Hersteller : Taiwan Semiconductor |
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Produkt ist nicht verfügbar |
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BSS84 RFG | Hersteller : Taiwan Semiconductor |
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Produkt ist nicht verfügbar |
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BSS84 RFG | Hersteller : Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 10V Power Dissipation (Max): 357mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 30 V |
Produkt ist nicht verfügbar |