BSS225L6327HTSA1 Infineon Technologies
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details BSS225L6327HTSA1 Infineon Technologies
Description: MOSFET N-CH 600V 90MA SOT89, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90mA (Ta), Rds On (Max) @ Id, Vgs: 45Ohm @ 90mA, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2.3V @ 94µA, Supplier Device Package: PG-SOT89, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 131 pF @ 25 V.
Weitere Produktangebote BSS225L6327HTSA1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
BSS225L6327HTSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 90MA SOT89 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90mA (Ta) Rds On (Max) @ Id, Vgs: 45Ohm @ 90mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 94µA Supplier Device Package: PG-SOT89 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 131 pF @ 25 V |
Produkt ist nicht verfügbar |