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BSS223PW L6327

BSS223PW L6327 Infineon Technologies


bss223pw_rev1.3.pdf Hersteller: Infineon Technologies
Trans MOSFET P-CH 20V 0.39A Automotive 3-Pin SOT-323 T/R
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Technische Details BSS223PW L6327 Infineon Technologies

Description: MOSFET P-CH 20V 390MA SOT323-3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 390mA (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 390mA, 4.5V, Power Dissipation (Max): 250mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 1.5µA, Supplier Device Package: PG-SOT323, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 15 V.

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BSS223PW L6327 BSS223PW L6327 Hersteller : Infineon Technologies BSS223PW_040702.pdf Description: MOSFET P-CH 20V 390MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 390mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 390mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
Supplier Device Package: PG-SOT323
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 15 V
Produkt ist nicht verfügbar
BSS223PWL6327 BSS223PWL6327 Hersteller : Infineon Technologies INFNS10365-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 390mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 390mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
Supplier Device Package: PG-SOT323-3-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 15 V
Produkt ist nicht verfügbar
BSS223PW L6327 BSS223PW L6327 Hersteller : Infineon Technologies Infineon-BSS223PW-DS-v01_05-en-469882.pdf MOSFET P-Ch -20V 390mA SOT-323-3
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