BSS169L6327 ROCHESTER ELECTRONICS


INFNS16754-1.pdf?t.download=true&u=5oefqw Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - BSS169L6327 - BSS169 60V-600V N-CHANNEL DEPLETION MOD
tariffCode: 85412100
euEccn: TBC
hazardous: false
productTraceability: No
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
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Technische Details BSS169L6327 ROCHESTER ELECTRONICS

Description: SMALL SIGNAL N-CHANNEL MOSFET, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170mA (Ta), Rds On (Max) @ Id, Vgs: 2.9Ohm @ 190mA, 10V, FET Feature: Depletion Mode, Power Dissipation (Max): 360mW (Ta), Vgs(th) (Max) @ Id: 1.8V @ 50µA, Supplier Device Package: PG-SOT23-3-5, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 7 V, Input Capacitance (Ciss) (Max) @ Vds: 68 pF @ 25 V.

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BSS169L6327 INFNS16754-1.pdf?t.download=true&u=5oefqw
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BSS169L6327 BSS169L6327 Hersteller : Infineon Technologies INFNS16754-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 2.9Ohm @ 190mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 68 pF @ 25 V
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BSS169 L6327 BSS169 L6327 Hersteller : Infineon Technologies Infineon-BSS169-DS-v01_08-EN-461928.pdf MOSFET N-Ch 100V 170mA SOT-23-3
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