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BSP603S2LHUMA1 ROCHESTER ELECTRONICS


Infineon-BSP603S2L-DS-v01_01-en.pdf?fileId=db3a30431a47d73d011a49742afe014f&ack=t Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - BSP603S2LHUMA1 - BSP603S2L 55V, N-CH, AUTOMOTIVE MOSFET,
tariffCode: 85412900
euEccn: TBC
hazardous: false
productTraceability: Yes-Date/Lot Code
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
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Technische Details BSP603S2LHUMA1 ROCHESTER ELECTRONICS

Description: MOSFET N-CH 55V 5.2A SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 2V @ 50µA, Supplier Device Package: PG-SOT223-4, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V.

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BSP603S2LHUMA1 BSP603S2LHUMA1 Hersteller : Infineon Technologies bsp603s2l_ds_11.pdf Trans MOSFET N-CH 55V 5.2A Automotive 4-Pin(3+Tab) SOT-223 T/R
Produkt ist nicht verfügbar
BSP603S2LHUMA1 BSP603S2LHUMA1 Hersteller : Infineon Technologies bsp603s2l_ds_11.pdf Trans MOSFET N-CH 55V 5.2A Automotive 4-Pin(3+Tab) SOT-223 T/R
Produkt ist nicht verfügbar
BSP603S2LHUMA1 BSP603S2LHUMA1 Hersteller : Infineon Technologies bsp603s2l_ds_11.pdf Trans MOSFET N-CH 55V 5.2A Automotive 4-Pin(3+Tab) SOT-223 T/R
Produkt ist nicht verfügbar
BSP603S2LHUMA1 BSP603S2LHUMA1 Hersteller : Infineon Technologies Infineon-BSP603S2L-DS-v01_01-en.pdf?fileId=db3a30431a47d73d011a49742afe014f&ack=t Description: MOSFET N-CH 55V 5.2A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Produkt ist nicht verfügbar