BSP372E6327

BSP372E6327 Infineon Technologies


nods.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 1.7A 4-Pin(3+Tab) SOT-223 T/R
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Technische Details BSP372E6327 Infineon Technologies

Description: MOSFET N-CH 100V 1.7A SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), Rds On (Max) @ Id, Vgs: 310mOhm @ 1.7A, 5V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: PG-SOT223-4, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±14V, Drain to Source Voltage (Vdss): 100 V, Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V.

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BSP372 E6327 BSP372 E6327 Hersteller : Infineon Technologies BSP372.pdf Description: MOSFET N-CH 100V 1.7A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 310mOhm @ 1.7A, 5V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±14V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
Produkt ist nicht verfügbar
BSP372 E6327 Hersteller : Infineon Technologies BSP372.pdf Infineon
Produkt ist nicht verfügbar