BSO330N02K G Infineon Technologies
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Technische Details BSO330N02K G Infineon Technologies
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5.4A, Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 10V, Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 20µA, Supplier Device Package: PG-DSO-8, Part Status: Active.
Weitere Produktangebote BSO330N02K G nach Preis ab 0.44 EUR bis 0.44 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| BSO330N02KG | Hersteller : Infineon Technologies |
 Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.4A Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 20µA Supplier Device Package: PG-DSO-8 Part Status: Active |
auf Bestellung 1422 Stücke: Lieferzeit 10-14 Tag (e) |
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