auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.074 EUR |
Produktrezensionen
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Technische Details BSN20BKR Nexperia
Description: MOSFET N-CH 60V 265MA TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 265mA (Ta), Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V, Power Dissipation (Max): 310mW (Ta), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: TO-236AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.49 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 20.2 pF @ 30 V.
Weitere Produktangebote BSN20BKR nach Preis ab 0.045 EUR bis 0.57 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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BSN20BKR | Hersteller : Nexperia |
 Trans MOSFET N-CH 60V 0.265A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSN20BKR | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 0.265A 3-Pin SOT-23 T/R |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSN20BKR | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 0.265A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSN20BKR | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 0.265A 3-Pin SOT-23 T/R |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSN20BKR | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 0.265A 3-Pin SOT-23 T/R |
auf Bestellung 20004 Stücke: Lieferzeit 14-21 Tag (e) |
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BSN20BKR | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 0.265A 3-Pin SOT-23 T/R |
auf Bestellung 20004 Stücke: Lieferzeit 14-21 Tag (e) |
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BSN20BKR | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.17A; 402mW; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.17A Power dissipation: 402mW Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 5.7Ω Mounting: SMD Gate charge: 0.49nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5320 Stücke: Lieferzeit 7-14 Tag (e) |
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BSN20BKR | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.17A; 402mW; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.17A Power dissipation: 402mW Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 5.7Ω Mounting: SMD Gate charge: 0.49nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 5320 Stücke: Lieferzeit 14-21 Tag (e) |
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BSN20BKR | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 265MA TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 265mA (Ta) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.49 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 20.2 pF @ 30 V |
auf Bestellung 2470 Stücke: Lieferzeit 10-14 Tag (e) |
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BSN20BKR | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 0.265A 3-Pin SOT-23 T/R |
auf Bestellung 7683 Stücke: Lieferzeit 14-21 Tag (e) |
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BSN20BKR | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 0.265A 3-Pin SOT-23 T/R |
auf Bestellung 7683 Stücke: Lieferzeit 14-21 Tag (e) |
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BSN20BKR | Hersteller : Nexperia |
MOSFETs BSN20BK/SOT23/TO-236AB |
auf Bestellung 19585 Stücke: Lieferzeit 10-14 Tag (e) |
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BSN20BKR | Hersteller : NEXPERIA |
Trans MOSFET N-CH 60V 0.265A 3-Pin SOT-23 T/R |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BSN20BKR | Hersteller : NEXPERIA |
Description: NEXPERIA - BSN20BKR - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 282000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSN20BKR | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 265MA TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 265mA (Ta) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.49 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 20.2 pF @ 30 V |
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