BSM75GB170DN2HOSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT MOD 1700V 110A 625W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 625 W
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
auf Bestellung 637 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 163.73 EUR |
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Technische Details BSM75GB170DN2HOSA1 Infineon Technologies
Description: IGBT MOD 1700V 110A 625W, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A, NTC Thermistor: No, Supplier Device Package: Module, Current - Collector (Ic) (Max): 110 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 625 W, Input Capacitance (Cies) @ Vce: 11 nF @ 25 V.
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Verfügbarkeit |
Preis ohne MwSt |
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| BSM75GB170DN2HOSA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - BSM75GB170DN2HOSA1 - BSM75GB170 INSULATED GATE BIPOLAR TRANS euEccn: TBC hazardous: false productTraceability: Yes-Date/Lot Code usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 637 Stücke: Lieferzeit 14-21 Tag (e) |
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BSM75GB170DN2HOSA1 | Hersteller : Infineon Technologies |
Trans IGBT Module N-CH 1700V 110A 625000mW Tray |
Produkt ist nicht verfügbar |
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| BSM75GB170DN2HOSA1 | Hersteller : Infineon Technologies |
Description: IGBT MOD 1700V 110A 625W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 110 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 625 W Input Capacitance (Cies) @ Vce: 11 nF @ 25 V |
Produkt ist nicht verfügbar |