Produkte > INFINEON TECHNOLOGIES > BSM50GP120BOSA1

BSM50GP120BOSA1 Infineon Technologies


BSM50GP120_6-17-2003.pdf Hersteller: Infineon Technologies
BSM50GP120BOSA1
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details BSM50GP120BOSA1 Infineon Technologies

Description: IGBT MODULE 1200V 50A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Three Phase Bridge Rectifier, Configuration: 3 Phase Inverter, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: Module, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Cutoff (Max): 500 µA, Input Capacitance (Cies) @ Vce: 3.3 pF @ 25 V.

Weitere Produktangebote BSM50GP120BOSA1

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
BSM50GP120BOSA1 Hersteller : Infineon Technologies BSM50GP120_6-17-2003.pdf LOW POWER ECONO
Produkt ist nicht verfügbar
BSM50GP120BOSA1 BSM50GP120BOSA1 Hersteller : Infineon Technologies BSM50GP120_6-17-2003.pdf Description: IGBT MODULE 1200V 50A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: 3 Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 3.3 pF @ 25 V
Produkt ist nicht verfügbar
BSM50GP120BOSA1 Hersteller : Infineon Technologies BSM50GP120_6-17-2003.pdf IGBT Modules LOW POWER ECONO
Produkt ist nicht verfügbar