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BSM50GD170DLBOSA1 Infineon Technologies


nods.pdf Hersteller: Infineon Technologies
Trans IGBT Module N-CH
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Technische Details BSM50GD170DLBOSA1 Infineon Technologies

Description: IGBT MOD 1700V 100A 480W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 50A, NTC Thermistor: No, Supplier Device Package: Module, Part Status: Obsolete, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 480 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V.

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BSM50GD170DLBOSA1 Hersteller : Infineon Technologies Description: IGBT MOD 1700V 100A 480W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 480 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
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