Produkte > ROCHESTER ELECTRONICS > BSM50GB120DN2HOSA1

BSM50GB120DN2HOSA1 ROCHESTER ELECTRONICS


12584.pdf Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - BSM50GB120DN2HOSA1 - BSM50GB120DN2 - IGBT POWER MODULE
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 19 Stücke:

Lieferzeit 14-21 Tag (e)
Produktrezensionen
Produktbewertung abgeben

Technische Details BSM50GB120DN2HOSA1 ROCHESTER ELECTRONICS

Description: IGBT MOD 1200V 78A 400W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A, NTC Thermistor: No, Supplier Device Package: Module, Part Status: Obsolete, Current - Collector (Ic) (Max): 78 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 400 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V.

Weitere Produktangebote BSM50GB120DN2HOSA1

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
BSM50GB120DN2HOSA1 Hersteller : Infineon Technologies BSM50GB120DN2HOSA1
Produkt ist nicht verfügbar
BSM50GB120DN2HOSA1 Hersteller : Infineon Technologies Description: IGBT MOD 1200V 78A 400W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 400 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Produkt ist nicht verfügbar
BSM50GB120DN2HOSA1 Hersteller : Infineon Technologies IGBT Modules MEDIUM POWER 34MM
Produkt ist nicht verfügbar