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BSM35GB120DN2HOSA1 ROCHESTER ELECTRONICS

Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - BSM35GB120DN2HOSA1 - BSM35GB120 INSULATED GATE BIPOLAR TRANS
euEccn: TBC
hazardous: false
productTraceability: Yes-Date/Lot Code
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)

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Lieferzeit 14-21 Tag (e)

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Technische Details BSM35GB120DN2HOSA1 ROCHESTER ELECTRONICS

Description: IGBT MOD 1200V 50A 280W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 35A, NTC Thermistor: No, Supplier Device Package: Module, Part Status: Obsolete, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 280 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 2 nF @ 25 V.

Weitere Produktangebote BSM35GB120DN2HOSA1

Foto	Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit	Preis ohne MwSt
	BSM35GB120DN2HOSA1	Hersteller : Infineon Technologies	Trans IGBT Module N-CH 1200V 50A 280W 7-Pin 34MM-1 Tray	Produkt ist nicht verfügbar
	BSM35GB120DN2HOSA1	Hersteller : Infineon Technologies	Description: IGBT MOD 1200V 50A 280W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 35A NTC Thermistor: No Supplier Device Package: Module Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 280 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2 nF @ 25 V	Produkt ist nicht verfügbar