BSM180D12P3C007 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: SIC POWER MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 880W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Vgs(th) (Max) @ Id: 5.6V @ 50mA
Supplier Device Package: Module
Part Status: Active
Description: SIC POWER MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 880W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Vgs(th) (Max) @ Id: 5.6V @ 50mA
Supplier Device Package: Module
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 1065.35 EUR |
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Technische Details BSM180D12P3C007 Rohm Semiconductor
Description: SIC POWER MODULE, Packaging: Bulk, Package / Case: Module, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 880W, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V, Vgs(th) (Max) @ Id: 5.6V @ 50mA, Supplier Device Package: Module, Part Status: Active.
Weitere Produktangebote BSM180D12P3C007 nach Preis ab 1043.68 EUR bis 1080.89 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||
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BSM180D12P3C007 | Hersteller : ROHM Semiconductor | Discrete Semiconductor Modules Half Bridge Module SiC UMOSFET & SBD |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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