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BSM120D12P2C005 ROHM Semiconductor
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 644.67 EUR |
12+ | 626.05 EUR |
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Technische Details BSM120D12P2C005 ROHM Semiconductor
Description: MOSFET 2N-CH 1200V 120A MODULE, Packaging: Bulk, Package / Case: Module, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 780W, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 10V, Vgs(th) (Max) @ Id: 2.7V @ 22mA, Supplier Device Package: Module, Part Status: Active.
Weitere Produktangebote BSM120D12P2C005 nach Preis ab 648.63 EUR bis 648.63 EUR
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BSM120D12P2C005 | Hersteller : Rohm Semiconductor |
![]() Packaging: Bulk Package / Case: Module Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 780W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 10V Vgs(th) (Max) @ Id: 2.7V @ 22mA Supplier Device Package: Module Part Status: Active |
auf Bestellung 11 Stücke: Lieferzeit 10-14 Tag (e) |
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