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BSM100GB120DN2KHOSA1 ROCHESTER ELECTRONICS

Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - BSM100GB120DN2KHOSA1 - MEDIUM POWER 34MM
euEccn: TBC
hazardous: false
productTraceability: Yes-Date/Lot Code
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
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Technische Details BSM100GB120DN2KHOSA1 ROCHESTER ELECTRONICS

Description: IGBT MOD 1200V 145A 700W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: Module, Current - Collector (Ic) (Max): 145 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 700 W, Current - Collector Cutoff (Max): 2 mA, Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V.

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BSM100GB120DN2KHOSA1 BSM100GB120DN2KHOSA1 Hersteller : Infineon Technologies 100gb120dnk.pdf Trans IGBT Module N-CH 1200V 145A 700000mW 7-Pin 34MM-1
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BSM100GB120DN2KHOSA1 Hersteller : Infineon Technologies Description: IGBT MOD 1200V 145A 700W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 700 W
Current - Collector Cutoff (Max): 2 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
Produkt ist nicht verfügbar
BSM100GB120DN2KHOSA1 Hersteller : Infineon Technologies Infineon MEDIUM POWER 34MM
Produkt ist nicht verfügbar