Technische Details BSM100GB120DLCKHOSA1 Infineon Technologies
Description: IGBT MOD 1200V 100A 830W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 125°C, NTC Thermistor: Yes, Supplier Device Package: Module, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 830 W.
Weitere Produktangebote BSM100GB120DLCKHOSA1
Foto | Bezeichnung | Hersteller | Beschreibung |
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BSM100GB120DLCKHOSA1 | Hersteller : Infineon Technologies |
Description: IGBT MOD 1200V 100A 830W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 125°C NTC Thermistor: Yes Supplier Device Package: Module Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 830 W |
Produkt ist nicht verfügbar |
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BSM100GB120DLCKHOSA1 | Hersteller : Infineon Technologies | IGBT Modules MEDIUM POWER 34MM |
Produkt ist nicht verfügbar |