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BSL308CL6327HTSA1

BSL308CL6327HTSA1 Infineon Technologies


4035bsl308c_rev.2.1.pdffolderiddb3a30431add1d95011aed428f2d0285fileid.pdf Hersteller: Infineon Technologies
Trans MOSFET N/P-CH 30V 2.3A/2A Automotive 6-Pin TSOP T/R
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Technische Details BSL308CL6327HTSA1 Infineon Technologies

Description: MOSFET N/P-CH 30V 2.3A TSOP6-6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 2.3A, 2A, Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V, Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 500nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 11µA, Supplier Device Package: PG-TSOP6-6.

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BSL308CL6327HTSA1 BSL308CL6327HTSA1 Hersteller : Infineon Technologies BSL308C_Rev+2+0.pdf?folderId=db3a30431add1d95011aed428f2d0285&fileId=db3a30431ff98815012060ff862e6193 Description: MOSFET N/P-CH 30V 2.3A TSOP6-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A, 2A
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 500nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-TSOP6-6
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