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BSD223P INFINEON


BSD223P_040702.pdf Hersteller: INFINEON
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Technische Details BSD223P INFINEON

Description: MOSFET 2P-CH 20V 0.39A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 250mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 390mA, Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 15V, Rds On (Max) @ Id, Vgs: 1.2Ohm @ 390mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 1.5µA, Supplier Device Package: PG-SOT363-PO.

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BSD223P BSD223P Hersteller : Infineon Technologies BSD223P_040702.pdf Description: MOSFET 2P-CH 20V 0.39A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 390mA
Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 390mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
Supplier Device Package: PG-SOT363-PO
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