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BSC094N06LS5ATMA1

BSC094N06LS5ATMA1 Infineon Technologies


Infineon-BSC094N06LS5-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015cc5ce52407ba3 Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL 60V 47A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
auf Bestellung 10000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.72 EUR
Mindestbestellmenge: 5000
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Technische Details BSC094N06LS5ATMA1 Infineon Technologies

Description: MOSFET N-CHANNEL 60V 47A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V, Power Dissipation (Max): 36W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 14µA, Supplier Device Package: PG-TDSON-8-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V.

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BSC094N06LS5ATMA1 BSC094N06LS5ATMA1 Hersteller : Infineon Technologies Infineon-BSC094N06LS5-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015cc5ce52407ba3 Description: MOSFET N-CHANNEL 60V 47A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
auf Bestellung 15347 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.24 EUR
12+ 1.51 EUR
100+ 1.06 EUR
500+ 0.85 EUR
1000+ 0.79 EUR
2000+ 0.73 EUR
Mindestbestellmenge: 8
BSC094N06LS5ATMA1 BSC094N06LS5ATMA1 Hersteller : Infineon Technologies Infineon_BSC094N06LS5_DataSheet_v02_02_EN-3360740.pdf MOSFETs DIFFERENTIATED MOSFETS
auf Bestellung 26443 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.46 EUR
10+ 1.65 EUR
100+ 1.22 EUR
500+ 0.96 EUR
1000+ 0.81 EUR
5000+ 0.76 EUR
Mindestbestellmenge: 2
BSC094N06LS5ATMA1 BSC094N06LS5ATMA1 Hersteller : Infineon Technologies infineon-bsc094n06ls5-datasheet-v02_01-en.pdf Trans MOSFET N-CH 60V 11A 8-Pin TDSON EP T/R
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