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BSC093N15NS5SCATMA1

BSC093N15NS5SCATMA1 Infineon Technologies

Infineon-BSC093N15NS5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c83cd30810183d5a13fbf31c5 Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 44A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 107µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 75 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+3.03 EUR
Mindestbestellmenge: 4000
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Technische Details BSC093N15NS5SCATMA1 Infineon Technologies

Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 87A (Tc), Rds On (Max) @ Id, Vgs: 9.3mOhm @ 44A, 10V, Power Dissipation (Max): 139W (Tc), Vgs(th) (Max) @ Id: 4.6V @ 107µA, Supplier Device Package: PG-TDSON-8-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 75 V.

Weitere Produktangebote BSC093N15NS5SCATMA1 nach Preis ab 3.03 EUR bis 7.9 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
BSC093N15NS5SCATMA1 BSC093N15NS5SCATMA1 Hersteller : Infineon Technologies Infineon_BSC093N15NS5SC_DataSheet_v02_01_EN-3360727.pdf MOSFETs N
auf Bestellung 5412 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+7.37 EUR
10+ 5.46 EUR
25+ 5.39 EUR
100+ 3.89 EUR
500+ 3.26 EUR
BSC093N15NS5SCATMA1 BSC093N15NS5SCATMA1 Hersteller : Infineon Technologies Infineon-BSC093N15NS5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c83cd30810183d5a13fbf31c5 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 44A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 107µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 75 V
auf Bestellung 5542 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.9 EUR
10+ 5.25 EUR
100+ 3.75 EUR
500+ 3.11 EUR
1000+ 3.03 EUR
Mindestbestellmenge: 3
BSC093N15NS5SCATMA1 Hersteller : Infineon Technologies infineon-bsc093n15ns5sc-datasheet-v02_01-en.pdf SP005560939
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