BSC0925NDATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 15A TISON8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 1157pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
Description: MOSFET 2N-CH 30V 15A TISON8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 1157pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
auf Bestellung 8385 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.06 EUR |
21+ | 0.86 EUR |
100+ | 0.67 EUR |
500+ | 0.57 EUR |
1000+ | 0.56 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BSC0925NDATMA1 Infineon Technologies
Description: INFINEON - BSC0925NDATMA1 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 40 A, 40 A, 0.0042 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 40A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 30V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 40A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.0042ohm, Verlustleistung, p-Kanal: 30W, Drain-Source-Spannung Vds, n-Kanal: 30V, euEccn: NLR, Bauform - Transistor: TISON, Anzahl der Pins: 8Pin(s), Produktpalette: OptiMOS Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.0042ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 30W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (23-Jan-2024).
Weitere Produktangebote BSC0925NDATMA1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
BSC0925NDATMA1 | Hersteller : INFINEON |
Description: INFINEON - BSC0925NDATMA1 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 40 A, 40 A, 0.0042 ohm rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 40A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 40A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0042ohm Verlustleistung, p-Kanal: 30W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: TISON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.0042ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 30W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 4830 Stücke: Lieferzeit 14-21 Tag (e) |
||
BSC0925NDATMA1 | Hersteller : INFINEON |
Description: INFINEON - BSC0925NDATMA1 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 40 A, 40 A, 0.0042 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 40A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 40A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0042ohm Verlustleistung, p-Kanal: 30W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: TISON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.0042ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 30W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 4830 Stücke: Lieferzeit 14-21 Tag (e) |
||
BSC0925NDATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 30V 15A 8-Pin TISON EP T/R |
Produkt ist nicht verfügbar |
||
BSC0925NDATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 30W; PG-TISON-8 Mounting: SMD Case: PG-TISON-8 Technology: OptiMOS™ Drain-source voltage: 30V Drain current: 40A On-state resistance: 5mΩ Type of transistor: N-MOSFET Power dissipation: 30W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
BSC0925NDATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 30V 15A TISON8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A Input Capacitance (Ciss) (Max) @ Vds: 1157pF @ 15V Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TISON-8 Part Status: Active |
Produkt ist nicht verfügbar |
||
BSC0925NDATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 30W; PG-TISON-8 Mounting: SMD Case: PG-TISON-8 Technology: OptiMOS™ Drain-source voltage: 30V Drain current: 40A On-state resistance: 5mΩ Type of transistor: N-MOSFET Power dissipation: 30W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |