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BSC0924NDIATMA1

BSC0924NDIATMA1 Infineon Technologies


Infineon-BSC0924NDI-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136ceae245448f5 Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 17A/32A TISON8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 32A
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
auf Bestellung 70000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.68 EUR
Mindestbestellmenge: 5000
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Technische Details BSC0924NDIATMA1 Infineon Technologies

Description: MOSFET 2N-CH 30V 17A/32A TISON8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 17A, 32A, Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V, Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V, FET Feature: Logic Level Gate, 4.5V Drive, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TISON-8, Part Status: Active.

Weitere Produktangebote BSC0924NDIATMA1 nach Preis ab 0.75 EUR bis 2.64 EUR

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BSC0924NDIATMA1 BSC0924NDIATMA1 Hersteller : Infineon Technologies Infineon-BSC0924NDI-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136ceae245448f5 Description: MOSFET 2N-CH 30V 17A/32A TISON8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 32A
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
auf Bestellung 76944 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.64 EUR
11+ 1.68 EUR
100+ 1.12 EUR
500+ 0.89 EUR
1000+ 0.81 EUR
2000+ 0.75 EUR
Mindestbestellmenge: 7
BSC0924NDIATMA1 BSC0924NDIATMA1 Hersteller : Infineon Technologies 11947bsc0924ndi_rev.2.0.pdffolderiddb3a304313b8b5a60113cee8763b02d7fil.pdf Trans MOSFET N-CH 30V 17A/32A 8-Pin TISON EP T/R
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BSC0924NDIATMA1 Hersteller : INFINEON TECHNOLOGIES Infineon-BSC0924NDI-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136ceae245448f5 BSC0924NDIATMA1 SMD N channel transistors
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